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Band gap tuning of a-Si:H from 1.55 eV to 2.10 eV by intentionally promoting structural relaxation - ScienceDirect
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Band gap determination of graphene, h-boron nitride, phosphorene, silicene, stanene, and germanene nanoribbons - IOPscience
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Tuning the Electronic Band Gap of Oxygen-Bearing Cubic Zirconium Nitride: c-Zr3–x(N1–xOx)4 | ACS Applied Electronic Materials
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Tuning the Electronic Band Gap of Oxygen-Bearing Cubic Zirconium Nitride: c-Zr3–x(N1–xOx)4 | ACS Applied Electronic Materials
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Wide-Range Band-Gap Tuning and High Electrical Conductivity in La- and Pb-Doped SrSnO3 Epitaxial Films | ACS Applied Materials & Interfaces
Electrically tunable band gap in strained h-BN/silicene van der Waals heterostructures - Physical Chemistry Chemical Physics (RSC Publishing)
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Band gap determination of graphene, h-boron nitride, phosphorene, silicene, stanene, and germanene nanoribbons - IOPscience
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Wide-Range Band-Gap Tuning and High Electrical Conductivity in La- and Pb-Doped SrSnO3 Epitaxial Films | ACS Applied Materials & Interfaces
![Band gap tuning of a-Si:H from 1.55 eV to 2.10 eV by intentionally promoting structural relaxation - ScienceDirect Band gap tuning of a-Si:H from 1.55 eV to 2.10 eV by intentionally promoting structural relaxation - ScienceDirect](https://ars.els-cdn.com/content/image/1-s2.0-S0022309398000222-gr4.gif)
Band gap tuning of a-Si:H from 1.55 eV to 2.10 eV by intentionally promoting structural relaxation - ScienceDirect
![Band gap tuning of a-Si:H from 1.55 eV to 2.10 eV by intentionally promoting structural relaxation - ScienceDirect Band gap tuning of a-Si:H from 1.55 eV to 2.10 eV by intentionally promoting structural relaxation - ScienceDirect](https://ars.els-cdn.com/content/image/1-s2.0-S0022309398000222-gr2.gif)
Band gap tuning of a-Si:H from 1.55 eV to 2.10 eV by intentionally promoting structural relaxation - ScienceDirect
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Wide-Range Band-Gap Tuning and High Electrical Conductivity in La- and Pb-Doped SrSnO3 Epitaxial Films | ACS Applied Materials & Interfaces
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Wide-Range Band-Gap Tuning and High Electrical Conductivity in La- and Pb-Doped SrSnO3 Epitaxial Films | ACS Applied Materials & Interfaces
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Wide-Range Band-Gap Tuning and High Electrical Conductivity in La- and Pb-Doped SrSnO3 Epitaxial Films | ACS Applied Materials & Interfaces
Transition of wide-band gap semiconductor h-BN(BN)/P heterostructure via single-atom-embedding - Journal of Materials Chemistry C (RSC Publishing)
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